Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

At the Future of Memory and Storage (FMS) 2026 in Santa Clara, Samsung showcased its latest AI memory portfolio, including concept models of zHBM and zNAND-O, and introduced V10 BV-NAND with over 400 layers. The company highlighted its roadmap for next-generation 3D memory architectures designed to meet the demands of high-performance computing and AI infrastructure. Samsung’s executives presented a keynote on maximizing AI system performance and power efficiency through these innovations.

Samsung’s zHBM concept model introduces a new memory architecture that vertically stacks HBM directly above AI accelerators, reducing data travel distance for higher bandwidth and improved power efficiency. The technology is expected to deliver approximately eight times the performance of HBM5, with more than 10 times the memory density and threefold energy efficiency. zHBM also supports customized designs to expand memory capacity and enhance accelerator performance, with plans for further optimization through close customer collaboration.

The zNAND-O solution, built on V-NAND technology, is designed for edge AI environments requiring real-time, data-intensive applications. It combines high space efficiency, improved I/O performance, and low latency in four- and eight-layer versions. Samsung also unveiled V10 BV-NAND, featuring its new Bonding V-NAND architecture with over 400 layers, marking a 58% increase in memory density over the previous generation and improved read, write, and I/O performance.

Samsung presented its latest AI memory and storage portfolio, including HBM4E, HBM5, LPDDR5X-PIM, and enterprise storage solutions like PM1763 and BM1773. The company emphasized its end-to-end strategy for AI infrastructure, leveraging its integrated device manufacturing capabilities to provide turnkey solutions that shorten development cycles and optimize performance and power efficiency for customers.