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Samsung Electronics and Broadcom Expand Strategic Collaboration Across Memory and Foundry Technologies

What happened
Based on Samsung Global Newsroom · Jul 25, 2026

Samsung Electronics and Broadcom signed an MOU to expand collaboration on memory, foundry, and advanced packaging technologies for AI infrastructure, with projected investments exceeding $200 billion through 2030.

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Samsung Electronics and Broadcom Expand Strategic Collaboration Across Memory and Foundry Technologies
Samsung Global Newsroom — Samsung
Key points
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The MOU was details during the AI Summit, held at The Midway in San Francisco.
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Attendees included Jinman Han, President and Head of Samsung Electronics’ Foundry Business, Hock Tan, President and CEO of Broadcom, senior executives from both companies and representatives of the Korean government.
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The companies expect the collaboration to be estimated at more than $200 billion across memory and foundry over the next five years through 2030.
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On the memory front, Samsung and Broadcom plan to pursue a strategic collaboration for the supply of industry-leading memory solutions, including High Bandwidth Memory (HBM), supporting Broadcom’s next-generation AI accelerators.
Key numbers
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The collaboration is projected to involve investments exceeding $200 billion across memory and foundry sectors through 2030.
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Samsung Electronics and Broadcom signed an MOU to expand collaboration on memory, foundry, and advanced packaging technologies for AI infrastructure, with projected investments exceeding $200 billion through 2030.

Samsung Electronics and Broadcom formalized a memorandum of understanding to deepen their strategic partnership in memory and foundry technologies, targeting next-generation AI infrastructure. The agreement was announced during the AI Summit in San Francisco, with executives from both companies and Korean government representatives in attendance. The collaboration is projected to involve investments exceeding $200 billion across memory and foundry sectors through 2030.

Under the agreement, Samsung will supply Broadcom with high-performance memory solutions, including High Bandwidth Memory (HBM), to support Broadcom’s upcoming AI accelerators. In foundry, the focus will be on Samsung’s 2-nanometer and more advanced process technologies for Broadcom’s Wireless Broadband Communications (WBC) solutions, aiming to enhance performance and efficiency.

The collaboration will also extend to advanced packaging technologies, such as 2.3D and 2.5D integration, built on Samsung’s 2nm process. These efforts aim to produce higher-performance and more power-efficient AI and networking silicon, addressing the growing demands of AI infrastructure.

Samsung’s Vice Chairman & CEO of the Device Solutions Division, Young Hyun Jun, emphasized the importance of integrated semiconductor technologies for AI demand, while Broadcom’s President of the Semiconductor Solutions Group, Charlie Kawwas, highlighted the necessity of ecosystem collaboration to scale AI infrastructure.

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